A model for stress-induced metal notching and voiding in very large-scale-integrated Al–Si (1%) metallization

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Abstract
The kinetics of stress-induced notching and voiding in very large-scale-integrated circuit Al–Si metallization have been investigated. A generalized time-to-failure model has been developed and an activation energy of 0.4 eV has been observed for the mechanism. The stress state of the passivation overcoat has been found to have a major impact on the notching and voiding tendency of the fine-grain metal.

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