LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 145-148
• https://doi.org/10.4028/www.scientific.net/msf.338-342.145

Abstract

Keywords

• CRYSTAL BENDING
• LPCVD
• ROCKING CURVE
• SCHOTTKY DIODE
• THICK LAYERS