Modulation characteristics of double-heterostructure superluminescent diodes
- 12 May 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (10) , 291
- https://doi.org/10.1049/el:19770213
Abstract
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.Keywords
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