ZnSexTe1−x films grown by pulsed laser deposition

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Abstract
An XeCl excimer laser was used to grow thin polycrystalline films of the ternary alloy semiconductor, ZnSexTe1−x, on sodium-free glass substrates. The laser ablation/evaporation process has produced films spanning the entire compositional range with x values close to those of the original target. At a typical growth temperature of 300 °C, the grains possess orientations which vary from a predominant 〈111〉 for ZnTe to 〈311〉 for ZnSe with an increasing fraction of 〈311〉 as the ZnSe fraction increases. X-ray diffraction shows that the alloy lattice constant increases linearly with the x value, absorption measurements show band bowing similar to that observed in bulk single crystals, and Raman studies show that the lattice dynamics are characteristic of single-vibrational-mode behavior over the entire alloy range.

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