Design aspects of MOS controlled thyristor elements
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- MOS-Controlled thyristors—A new class of power devicesIEEE Transactions on Electron Devices, 1986
- Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Physics and simulation of small MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982