Intermediate-valent Smand the hybridization model: An optical study
- 15 January 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (2) , 893-898
- https://doi.org/10.1103/physrevb.29.893
Abstract
Reflectivity measurements in the far-infrared region at 4 K show that the Sm spectrum is semiconductorlike with a reflectivity maximum located at 5.5 meV. This peak is absent at 300 K and the spectrum is metal-like. Optical constants are calculated by means of the Kramers-Kronig relations; the dielectric constants are unusually large and yield at 4 K a gap value of 3-4.7 meV. A two-oscillator fit of has been calculated and the evolving oscillator strength has been used to evaluate in first approximation the interband density of states: The results are compared to the predictions of the hybridization model.
Keywords
This publication has 17 references indexed in Scilit:
- Point contact spectroscopy of intermediate valence compoundsJournal of Applied Physics, 1982
- Point-contact spectroscopy on SmB6, TmSe, LaB6 and LaSeSolid State Communications, 1982
- Large low-temperature Hall effect and resistivity in mixed-valent SmPhysical Review B, 1979
- Valence Fluctuating State in SmB6Le Journal de Physique Colloques, 1979
- Mixed-valence compoundsReviews of Modern Physics, 1976
- -Virtual-Bound-State Formation in Ceat Low TemperaturesPhysical Review Letters, 1975
- Rare-earth compounds with mixed valenciesPhilosophical Magazine, 1974
- Heat Capacity and Resistivity of Metallic SmS at High PressurePhysical Review B, 1973
- Physical Properties of SmPhysical Review B, 1971
- Stabilité des Moments Magnétiques Localisés dans les MétauxAdvances in Physics, 1968