Measurement of Hot Carrier Diffusion Constant in Semiconductors

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Abstract
Measurements of the electric field dependence of the hole diffusion constant in n‐type germanium were made up to 2000 V/cm at temperatures of 297°, 195°, and 77°K. A distinctive feature of our experiments was the attenuation‐rate measurements of sinusoidally modulated hole wave drifting along a filamentary specimen by the electric field supplied from a high‐voltage pulser. The resistivity of the specimen was 5.3 Ω· cm and the hole diffusion constant was obtained which increased nearly in proportion to the two‐thirds power of the electric field above 50 V/cm at 297°K and increased more rapidly at lower temperatures. For example, the result was Dp=900 cm2/sec when the electric field intensity was 1000 V/cm at 297°K.

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