Carrier number fluctuation model of 1/f noise in a semiconductor device
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4) , 906-910
- https://doi.org/10.1109/T-ED.1987.23014
Abstract
From Suh's total carrier number fluctuation model of 1/f noise generation mechanism, a model that seems to be able to describe the behavior of 1/f noise in various semiconductor devices is presented. The model is formulated in a simple logical procedure without any ambiguous or obscure assumptions and expresses the voltage fluctuation spectral density and the current fluctuation spectral density in terms of the short-circuited channel current fluctuation spectral density. The obtained expressions seem to fit in various experimental results.Keywords
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