Diffusion and Electrical Activation After a Rapid Thermal Annealing of an As and B-Co-Implanted Polysilicon Layer

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Abstract
This work provides an experimental insight into the physical mechanisms involved in the co-diffusion of arsenic and boron in polysilicon/monocrystalline Si bilayers, during the formation of shallow N+ emitters for the BiCMOS technology. The RTA-induced redistribution of As and B successively implanted in a 380 nm LPCVD polysilicon layer is studied by SIMS measurements. Hall effect, as well as sheet resistance measurements, show that the electrical activation of dopants in the co-implanted structures is satisfactory from a RTA temperature of 1100 °C

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