Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology
- 18 June 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (13) , 1241-1243
- https://doi.org/10.1049/el:19920784
Abstract
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3μm gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30dB gain and 6.5GHz bandwidth. Matching extends the bandwidth to 9.0GHz. In mixer mode at 12GHz input frequency and 1.5GHz IF frequency the chip shows 11.5dB conversion gain. The chip has a power dissipation of 125mW at a supply voltage of 3.50V.Keywords
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