Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers
- 1 January 2002
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 21 (22) , 1739-1741
- https://doi.org/10.1023/a:1020952200295
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