Thin oxide growth on 6H-silicon carbide
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 175-178
- https://doi.org/10.1016/s0167-9317(97)00042-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbideApplied Physics Letters, 1994
- Dielectric strength of thermal oxides on 6H-SiC and 4H-SiCApplied Physics Letters, 1994
- Electrical properties of β-SiC metal-oxide-semiconductor structuresJournal of Applied Physics, 1991
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965