Microwave performance of Ga x In 1-x P/Ga 0.47 In 0.53 Asresonant tunnelling diodes
- 11 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (12) , 1267-1268
- https://doi.org/10.1049/el:19980860
Abstract
Room temperature DC and microwave operation of aluminium free GaInP/GaInAs/InP resonant tunnelling diodes is reported. The diodes exhibited peak current densities up to 64 kA/cm2 and useful peak to valley current ratios. On-wafer S-parameters were measured up to 40 GHz to extract the equivalent circuit of the device. Based on the small signal analysis, the diode cutoff frequency was estimated to be 150 GHz.Keywords
This publication has 1 reference indexed in Scilit:
- GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling DiodesMRS Proceedings, 1994