Photoquenching and characterization studies in a bulk optically controlled GaAs semiconductor switch

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Abstract
Copper compensated silicon doped semiinsulating gallium arsenide (GaAs:Si:Cu) has been shown to exhibit the characteristics of a high-power optically controlled switch that can be closed and opened on a nanosecond time scale [1]. In such switches it is possible to activate and deactivate photoconductivity on command with two laser pulses of different wavelengths [2]. Infrared quenching measurements at low fields show complete quenching of the persistent photoconductivity. At fields greater than 3. 5 kV/cm the quenching is temporarily effective against " lock-on" currents. In order to better understand the switch behavior and be able to optimize switch performance modeling studies have been performed. Basic deep level data for the modeling have been obtained from photo-induced current transient spectroscopy (PICTS). The method and results of measurements on basic deep level parameters such as activation energy are discussed. Experimental studies on current voltage characteristics at high fields show negative differential conductivity.

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