Subhalf-micrometer p-channel MOSFET's with 3.5-nm gate Oxide fabricated using X-ray lithography
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (6) , 266-268
- https://doi.org/10.1109/EDL.1987.26625
Abstract
Subhalf-micrometer p-channel MOSFET's with ultra-thin gate oxide (3.5 nm) have been fabricated using X-ray lithography and electron cyclotron resonance (ECR) plasma etching. The fabricated MOSFET's with 0.2-µm channel lengths show long-channel behavior and extremely high (200 mS/mm) transconductance.Keywords
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