Distributions of hole and electron trapping centers in SiO2 film on Si, and the relation with the electrostatic tribo electrification phenomena of quartz

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Abstract
The details of the distribution of hole and electron trapping centers in SiO2 film on Si have been studied. Trapped holes are located and related mainly to excess silicon at the Si‐SiO2 interface and trapped electrons are located and related mainly to excess oxygen at the SiO2 surface. By the friction tests of quartz samples, new electrostatic tribo electrification phenomena were found. By oxygen annealing, the trapping of quartz changes from positive to negative and by friction of the same type quartz samples, the surface changes show the same polarity. These results show that electro tribo electrification phenomena are related to surface hole and electron trapping states.

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