Heterojunction formation using amorphous materials
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3) , 85-86
- https://doi.org/10.1063/1.88089
Abstract
Heterojunctions have been fabricated by depositing glass films onto single−crystal silicon substrates. Junction behavior has been exhibited regardless of the electrical or chemical properties of the glass film. The observed characteristics are a function of these properties. Current rectification, variable capacitance, sharp reverse breakdown, and photovoltaic responses have been observed.Keywords
This publication has 3 references indexed in Scilit:
- Switching Phenomena in Thin FilmsJournal of Vacuum Science and Technology, 1973
- Properties of chalcogenide glass-silicon heterojunctionsApplied Physics Letters, 1973
- Photoelectric Properties of Crystalline-Amorphous (CdS-As2Se3) HeterojunctionJapanese Journal of Applied Physics, 1970