Conductivity and hall effect of heavily doped semiconductors at low temperatures in a weak magnetic field
- 1 January 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 49 (1) , 179-189
- https://doi.org/10.1002/pssb.2220490117
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Contribution to the Theory of Impurity Band Conduction. IIProgress of Theoretical Physics, 1968
- Formulas and Theorems for the Special Functions of Mathematical PhysicsPublished by Springer Nature ,1966
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955
- Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1954
- The electrical properties of germanium semiconductors at low temperaturesPhysica, 1954
- The Resistivity and Hall Effect of Germanium at Low TemperaturesPhysical Review B, 1950
- Theory of Resistivity and Hall Effect at Very Low TemperaturesPhysical Review B, 1950