GHz-Band Surface Acoustic Wave Devices Using Aluminum Nitride Thin Films Deposited by Electron Cyclotron Resonance Dual Ion-Beam Sputtering
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4052-4056
- https://doi.org/10.1143/jjap.32.4052
Abstract
AlN thin films have been deposited on basal plane ((001)Al2O3) and R-plane ((11̄2)Al2O3) sapphire by an ECR dual ion-beam sputtering method. The (001) plane of AlN was epitaxially grown on (001)Al2O3. On the other hand, it was found that the (001) plane of AlN was deposited on (11̄2)Al2O3 with an inclination of about 26 degrees against the substrate, and a surface wave having high coupling and high velocity (6684 m/s) was excited on this substrate. Resonator-type 1.67 GHz band SAW filters have been fabricated using AlN thin film deposited on (11̄2)Al2O3. The insertion loss, suppression and TCD were 7.9 dB, more than 20 dB and 35 ppm/°C, respectively. These are the best values yet in a GHz band SAW filter based on AlN thin film, and are good enough to allow practical use.Keywords
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