Annealing of High Dose Sb‐Implanted Single‐Crystal Silicon
- 1 December 1985
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 132 (12) , 3048-3052
- https://doi.org/10.1149/1.2113720
Abstract
High doses of Sb implanted in silicon and then annealed at a temperature range between 800° and 1200°C cause Sb precipitation and extrinsic diffusion. Sb precipitation has not been completed at temperatures between 800° and 1000°C for 60–400 min duration; a supersaturation of substitutional Sb is detected under the same conditions. The oxidation of such samples causes Sb segregation and anomalous oxide growth. Residual crystal damage after annealing can be observed.Keywords
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