A TEM Study of the Structure of Polycrystalline Si Films on (111) Si Substrates Grown by Low Pressure Chemical Vapor Deposition
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1987
- High-performance thin-film transistors from optimized polycrystalline silicon filmsApplied Physics Letters, 1987
- Structural studies of low-temperature low-pressure chemical deposited polycrystalline siliconJournal of Applied Physics, 1987
- Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layersApplied Physics Letters, 1986
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980