Superconducting memory device using Josephson junctions

Abstract
A superconducting storage device is proposed in which a Josephson tunnelling junction, switched by a control film strip, replaces the cryotron in a one-cryotron-per-bit storage cell. The device should be fast, work at 4.2° K and require a simple technology, which must, however, yield reproducible thin Josephson tunnelling layers.