Erbium Implanted in III–V Materials
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2348-2350
- https://doi.org/10.1143/jjap.27.l2348
Abstract
Erbium impurities were implanted in binary, ternary and quaternary III–V semiconductors. The main erbium emission centered at 1.54 µm is an invariant for III–V semiconductors having a band gap energy higher than the intrashell transition energy of Er 4f electrons (0.805 eV). The erbium emission is independent of the emission temperature from 2 K to 300 K.Keywords
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