Oxygen distribution in a horizontal Bridgman-grown, semi-insulating GaAs ingot

15 February 1985

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 46 (4) , 391-393
https://doi.org/10.1063/1.95588

Abstract

Oxygen concentration in a horizontal Bridgman‐grown, chromium and oxygen‐doped, semi‐insulating GaAs ingot was analyzed using charged particle activation analysis. The oxygen concentration ranged from 2.0×10¹⁵ at seed end to 7.2×10¹⁵ cm⁻³ at tail end. The change of oxygen concentration measured along the length of ingot was in accordance with the normal‐freeze equation. The effective distribution coefficient of oxygen was estimated to be 0.39.

Keywords

GALLIUM ARSENIDES
IMPURITIES
OXYGEN
DOPING PROFILES
SPATIAL DISTRIBUTION
BRIDGMAN METHOD
ACTIVATION ANALYSIS
RADIOCHEMICAL ANALYSIS
GAAS

This publication has 1 reference indexed in Scilit:

Characterization of thin active layer on semi-insulating GaAs by mapping of FET array performance
IEEE Transactions on Electron Devices, 1984