A linear NMOS depletion resistor and its application in an integrated amplifier
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (6) , 932-938
- https://doi.org/10.1109/JSSC.1984.1052248
Abstract
A linear resistor has been realized by using NMOS depletion transistors operated in the triode region. While such a resistor is mainly intended for single-ended and first quadrant mode of conduction, where it achieves a nonlinearity of .03% full scale in the 0-10 V voltage range, it can also be used as a floating element and operated in the first as well as third quadrant mode of conduction (i.e. with V and I both either positive or negative) with some degradation in linearity and voltage range. A linear noninverting amplifier with an accurately controlled gain of 16 has been realized by using a high open-loop gain (90 dB) operational amplifier and dimensioning the simulated resistors to set the closed-loop gain.Keywords
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