Abstract
Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.

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