Theory of core excitons

Abstract
The major chemical trends in the binding energies of intrinsic and extrinsic core excitons are predicted for zinc-blende semiconductors using an empirical tight-binding theory and localized empirical core-hole potentials. A transition from a shallow Wannier exciton to a deep Frenkel exciton is predicted for an exciton at a core-exciton absorption edge, depending on the chemical structure of the excited atom and the localization of the core hole. The theory is applied successfully to the bound and resonant Ga 3d core excitons in GaP, GaAs, and GaSb.