Ultra-high gain, low noise monolithic InP HEMT distributed amplifier from 5 to 40 GHz

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Abstract
A monolithic 5–45 GHz distributed amplifier has been developed utilising 0.25 μm InAlAs/InGaAs lattice matched HEMTs with a mushroom gate profile as active devices. A measured gain of 12.5±0.5 dB from 5 to 40 GHz and a measured noise figure of 2.5–4 dB in the Ka-band were achieved.