Semiconductor Counters with Thin Window n+ and p+ - Contacts Produced by Ion-Implantation
- 1 June 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 15 (3) , 232-238
- https://doi.org/10.1109/TNS.1968.4324942
Abstract
Ion-implantation techniques were used to produce n+ and p+-contacts on n and p-type germanium, n and p-type silicon and lithium compensated germanium. Interstitial and substitutional doping behaviour of 33 elements were investigated. Only with few ions it is possible to get non-injecting contacts with good reverse characteristics using low temperature annealing process. Results on the application of those contacts to radiation detection are given.Keywords
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