Fracture Strength Of Doped And Undoped Polysilicon
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 72-75
- https://doi.org/10.1109/sensor.1995.721747
Abstract
In this paper we present a study on the dopant and process dependence of the fracture stress of polysilicon films measured in situ using surface micromachined tensile test structures. The micromachined fracture test structures consist of a narrow center beam, loaded by wider beams which are under residual tensile stress.Keywords
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