Thermoelectric and galvanomagnetic investigations of VI group semiconductors Se and Te at high pressure up to 30GPa
- 22 February 2002
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 121 (6-7) , 323-327
- https://doi.org/10.1016/s0038-1098(01)00501-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Transverse magnetoresistance: A novel two-terminal method for measuring the carrier density and mobility of a semiconductor layerApplied Physics Letters, 1994
- Ultrahigh pressure diamond-anvil cell and several semiconductor phase transition pressures in relation to the fixed point pressure scaleReview of Scientific Instruments, 1975
- The Effect of Pressure on the Electron Effective Mass in InSbPhysica Status Solidi (b), 1968