Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes

Publisher Website
Google Scholar
Abstract
The reverse dark current of Ga0.8Al0.2AsySb1−y avalanche photodiodes was measured over a wide temperature range. The dark current at high voltages is dominated by a tunneling component which has been identified as defect tunneling because the tunneling energy is considerably less than the band-gap energy. This identification is supported by the observation of a second tunneling component which becomes dominant at high electric fields.