High-Frequency Doubler Operation of GaAs Field-Effect Transistors
Open Access
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (6) , 462-473
- https://doi.org/10.1109/tmtt.1983.1131526
Abstract
A comprehensive study of single-gate GaAs FET frequency doublers is presented. Special emphasis is placed on exploring high-frequency limitations, while yielding explanations for previously observed lower frequency phenomena as well. Extensive Iarge-signal simulations demonstrate the underlying relationships between circuit performance characteristics and principal design parameter. Verifying experiments include straight frequency doubler and a self-oscillating doubler, both with output signal frequencies in Ku-band. The self-oscillating doubler appears especially attractive, yielding an overall dc-to-RF efficiency of 10 percent. The type of transistor employed in the numerical and experimental examples possesses a gate length of 0.5 µm and a gate width of 250 µm.Keywords
This publication has 12 references indexed in Scilit:
- A 69 GHz FET OscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Balanced Dual Gate GaAs FET Frequency DoublersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Harmonic Load-PullPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Dual-Gate GaAs FET as a Frequency Multiplier at Ku-BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Frequency Doublers with GaAs FET'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A High Power GaAs FET Frequency Multiplier for Microwave Radio Application at C-BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Single-Gate MESFET Frequency DoublersIEEE Transactions on Microwave Theory and Techniques, 1982
- Large-Signal Technique for Designing Single-Frequency and Voltage-Controlled GaAs FET OscillatorsIEEE Transactions on Microwave Theory and Techniques, 1981
- Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static ModelIEEE Transactions on Microwave Theory and Techniques, 1979
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978