Characterization of SrTiO3thin films prepared by RF magnetron sputtering
- 14 April 1992
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 25 (4) , 727-729
- https://doi.org/10.1088/0022-3727/25/4/020
Abstract
Polycrystalline SrTiO3 thin films have been prepared on Si(100) substrates by RF magnetron sputtering. The films were deposited at 400 degrees C and were annealed at 600 degrees C. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. From the result of the capacitance-voltage (C-V) characteristics the dielectric constant and the flat band voltage of the annealed films were measured to be 75 and -0.31 V, respectively. These oxide thin films with high dielectric constant are potentially useful in ULSI applications.Keywords
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