Second-Order Piezoresistance Coefficients of n-Type Silicon
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10A) , L1676
- https://doi.org/10.1143/jjap.28.l1676
Abstract
The nonlinear piezoresistance effect of n-type silicon was measured under and stresses at room temperature, from which the first- and second-order coefficients in stress were determined. Second-order piezoresistance expressions were deduced from a model based on the stress-dependent carrier transfer between the valleys. The experimental results are in fairly good agreement with the theoretical ones.Keywords
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