Artificial dielectrics: Nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix
- 15 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (12) , 6502-6506
- https://doi.org/10.1063/1.369019
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Artificial dielectrics: Nonlinear optical properties of silicon nanoclusters at λ=532 nmApplied Physics Letters, 1997
- Encapsulated nanocrystals and quantum dots formed by ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Nonlinear optical properties of silicon nanoclustersApplied Physics Letters, 1997
- Deposition and analysis of silicon clusters generated by laser-induced gas phase reactionJournal of Applied Physics, 1995
- Effects of multiple internal sample reflections on nonlinear refractive Z-scan measurementsApplied Optics, 1994
- Nonlinear-transmission spectra of porous silicon: Manifestation of size quantizationApplied Physics Letters, 1994
- Quantum Confinement in Size-Selected, Surface-Oxidized Silicon NanocrystalsScience, 1993
- Artificial dielectric polymeric waveguides: semiconductor-embedded filmsOptics Letters, 1990
- Sensitive measurement of optical nonlinearities using a single beamIEEE Journal of Quantum Electronics, 1990
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982