Surface states on silicon surfaces bombarded and annealed in high vacuum
- 30 November 1966
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 5 (3) , 380-384
- https://doi.org/10.1016/0039-6028(66)90035-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Surface states on clean siliconSurface Science, 1964
- Comparison of the Photoelectric Properties of Cleaved, Heated, and Sputtered Silicon SurfacesJournal of Applied Physics, 1964
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962
- Cross sections of midgap surface states in silicon by pulsed field effect experimentJournal of Physics and Chemistry of Solids, 1960
- Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron DiffractionJournal of Applied Physics, 1958
- Таммовские связанные состояния электронов на поверхности кристалла и поверхностные колебания атомов решёткиUspekhi Fizicheskih Nauk, 1955