High-quality GaInN/GaN multiple quantum wells
- 4 March 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (10) , 1403-1405
- https://doi.org/10.1063/1.116094
Abstract
High‐quality Ga0.92In0.08N–GaN multiple quantum wells structures (MQW) were grown successfully by metalorganic vapor phase epitaxy. Fine multilayer structures with a thickness period of 7–9 nm were detected by secondary ion mass spectroscopy. The dislocation density in the MQW was found to be in the range of 0.5–2×109 cm−2 by transmission electron microscopy. The MQW extremely enhanced by two orders of magnitude, the cathodoluminescence intensity compared with bulk Ga0.91In0.09N.Keywords
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