A large area TDI image sensor for low light level imaging

Abstract
A 1030 × 128 element time delay and integration (TDI) CCD image sensor has been developed for low-light-level (L 3 ) imaging applications. For L 3 imaging, output is derived from a high-gain low-noise floating-gate amplifier (FGA). For larger input signal levels, a second, resettable floating-gate amplifier (RFGA) with lower gain and wider dynamic range provides output in parallel to the FGA. The device features four-phase buried-channel construction and a polysilicon gate design tailored to produce optimum broad-band responsivity. Input signal levels of 500 electrons have been successfully imaged and amplifier noise levels of approximately 20 electrons have been observed.

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