A large area TDI image sensor for low light level imaging
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8) , 1688-1693
- https://doi.org/10.1109/T-ED.1980.20089
Abstract
A 1030 × 128 element time delay and integration (TDI) CCD image sensor has been developed for low-light-level (L 3 ) imaging applications. For L 3 imaging, output is derived from a high-gain low-noise floating-gate amplifier (FGA). For larger input signal levels, a second, resettable floating-gate amplifier (RFGA) with lower gain and wider dynamic range provides output in parallel to the FGA. The device features four-phase buried-channel construction and a polysilicon gate design tailored to produce optimum broad-band responsivity. Input signal levels of 500 electrons have been successfully imaged and amplifier noise levels of approximately 20 electrons have been observed.Keywords
This publication has 4 references indexed in Scilit:
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