A 4-Mb toggle MRAM based on a novel bit and switching method
Top Cited Papers
- 17 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 41 (1) , 132-136
- https://doi.org/10.1109/tmag.2004.840847
Abstract
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum2. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presentedKeywords
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