Electron Transport in Hydrogenated Amorphous Silicon Prepared by rf Sputtering

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Abstract
Electrical and photoelectric properties of rf sputtered a-Si prepared under various deposition conditions have been studied. The a-Si films were deposited onto NESA coated glass substrates which serve as optical window for photoelectric measurements. The temperature dependence of the photoconductivity is tentatively understood on the model which includes two kinds of traps located near the conduction and valence bands. The photoconductivity and photovoltage are observed in the spectral region which is determined by the optical gap of a-Si and SnO2. It is confirmed experimentally that high photoconductivity is correlated closely to large photovoltage.

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