Low-voltage organic electroluminescent devices using pin structures
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- 7 January 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (1) , 139-141
- https://doi.org/10.1063/1.1432110
Abstract
We have realized a small-molecule organic light-emitting diode where the intrinsic emitter layer is sandwiched by n- and p-doped transport layers with appropriate blocking layers. The diodes based on this pin concept have exponential forward characteristics up to comparatively high current densities. The diodes reach high brightness at very low operating voltage: for instance, 1000 cd/m2 at a voltage of 2.9 V. Despite the highly doped transport layers, the devices reach very high efficiency for the given emitter system up to high brightness.Keywords
This publication has 26 references indexed in Scilit:
- Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layerThin Solid Films, 2000
- Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layersApplied Physics Letters, 1999
- Electroluminescence in conjugated polymersNature, 1999
- Organic EL cells using alkaline metal compounds as electron injection materialsIEEE Transactions on Electron Devices, 1997
- Organic electroluminescent devices with improved stabilityApplied Physics Letters, 1996
- Multilayer White Light-Emitting Organic Electroluminescent DeviceScience, 1995
- Multilayered organic electroluminescent device using a novel starburst molecule, 4,4′,4″-tris(3-methylphenylphenylamino)triphenylamine, as a hole transport materialApplied Physics Letters, 1994
- Carrier tunneling and device characteristics in polymer light-emitting diodesJournal of Applied Physics, 1994
- Poly(p-phenylenevinylene) light-emitting diodes: Enhanced electroluminescent efficiency through charge carrier confinementApplied Physics Letters, 1992
- Organic electroluminescent diodesApplied Physics Letters, 1987