Influence of degeneracy on behaviour of homojunction GaAs bipolar transistor
- 15 March 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (6) , 258-259
- https://doi.org/10.1049/el:19840173
Abstract
In the letter the beneficial influence of degeneracy mechanisms on the electrical properties of a homojunction bipolar transistor has been highlighted.Keywords
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