Investigations of dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy with intermittent annealings in N2 ambient

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Abstract
The feasibility of studying dynamical changes in metal/silicon and ion‐implanted silicon thin films by cross‐sectional transmission electron microscopy with intermittent annealings in N2 ambient up to 900 °C is demonstrated. Interactions of nickel thin films with oxidation‐induced stacking faults and fluorine bubbles, the evolution of microstructural defects and solid‐phase epitaxial growth in BF+2 ‐implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain information otherwise unattainable.