Dislocation imaging using ion beam induced charge
- 21 June 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (25) , 3309-3311
- https://doi.org/10.1063/1.109055
Abstract
The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 μm thick epitaxial layer of Si0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 μm under present conditions. The factors which presently limit this value, and methods for improving it are discussed.Keywords
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