Theory of polar scattering in semiconductor quantum structures
- 15 March 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (8) , 3890-3899
- https://doi.org/10.1103/physrevb.35.3890
Abstract
The scattering rate of free electrons due to polar interactions with LO phonons in two-dimensional structures (e.g., semiconductor heterojunctions and quantum wells) is calculated as a function of the electron energy, electron and lattice temperatures, the carrier density, and the layer thickness. A many-body perturbative formalism is used with phonon-emission and -absorption self-energy terms obtained explicitly. Effects of screening and degeneracy on the scattering rate are critically discussed. Detailed numerical results for the experimentally well-studied modulation-doped GaAs heterojunctions and quantum wells are given.Keywords
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