Emitter space charge layer transit time in bipolar junction transistors
- 1 April 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (4) , 367-370
- https://doi.org/10.1016/0038-1101(81)90030-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterisation of linearly graded p-n junctionSolid-State Electronics, 1979
- Characterization of space-charge properties of a linearly graded p-n junction by an approximate "Regional" analysis methodIEEE Transactions on Electron Devices, 1976
- Characterization of current transport of narrow-base bipolar transistors by the regional approachIEEE Transactions on Electron Devices, 1976
- The effect of emitter doping gradient on fTin microwave bipolar transistorsIEEE Transactions on Electron Devices, 1975
- Improved microwave-transistor structureElectronics Letters, 1972
- Design and Development of an Ultralow-Capacitance, High-Performance Pedestal TransistorIBM Journal of Research and Development, 1971
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960