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Integrated injection logic with extended temperature range capability
Home
Publications
Integrated injection logic with extended temperature range capability
Integrated injection logic with extended temperature range capability
DD
D.C. Dening
D.C. Dening
LR
L.J. Ragonese
L.J. Ragonese
SL
S.C.Y. Lee
S.C.Y. Lee
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1 January 1979
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
192-195
https://doi.org/10.1109/iedm.1979.189576
Abstract
Silicon I
2
L devices were designed, fabricated and analyzed. These devices were shown to be fully operational from -55°C to +300°C.
Keywords
TEMPERATURE DISTRIBUTION
SILICON
LEAKAGE CURRENT
CONDUCTIVITY
LOGIC DEVICES
SEMICONDUCTOR PROCESS MODELING
SEMICONDUCTOR DEVICE DOPING
CIRCUITS
LABORATORIES
IMMUNITY TESTING
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