Evaluation of the constant photocurrent method for determining the energy distribution of localised states in disordered semiconductors
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 343-346
- https://doi.org/10.1016/s0022-3093(05)80126-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tailPhilosophical Magazine Part B, 1988
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981