Nonequilibrium point defects and diffusion in silicon

• 15 October 1994
• journal article
• Published by Elsevier in Materials Science and Engineering: R: Reports
• Vol. 13  (3) , 105-192
• https://doi.org/10.1016/0927-796x(94)90009-4

Abstract

Keywords

• SILICON
• NONEQUILIBRIUM POINT DEFECTS
• SILICIDATION
• PREDICTION AND CONTROL
• DOPANT DIFFUSION